PDTC143XEF,115 NXP Semiconductors, PDTC143XEF,115 Datasheet - Page 4

TRANS NPN W/RES 50V SOT-490

PDTC143XEF,115

Manufacturer Part Number
PDTC143XEF,115
Description
TRANS NPN W/RES 50V SOT-490
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC143XEF,115

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2163-2
934057875115
PDTC143XEF T/R
NXP Semiconductors
5. Limiting values
PDTC143X_SER_10
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
V
I
I
P
T
T
T
O
CM
stg
j
amb
CBO
CEO
EBO
I
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
positive
negative
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 10 — 16 November 2009
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
Conditions
open emitter
open base
open collector
single pulse;
t
T
p
amb
≤ 1 ms
≤ 25 °C
PDTC143X series
[1][2]
[2][3]
[1]
[1]
[1]
[1]
[1]
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
−65
−65
Max
50
50
7
+20
−7
100
100
150
250
250
250
500
250
200
+150
150
+150
© NXP B.V. 2009. All rights reserved.
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
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