BCX53-16T/R NXP Semiconductors, BCX53-16T/R Datasheet - Page 9

• Manufacturer Part Number: BCX53-16T/R
• Description: Trans GP BJT PNP 80V 1A 4-Pin(3+Tab) SOT-89 T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BCX53-16T/R

• Package: 4SOT-89
• Supplier Package: SOT-89
• Pin Count: 4
• Minimum Dc Current Gain: 100@150mA@2V
• Maximum Operating Frequency: 145(Typ) MHz
• Maximum Dc Collector Current: 1 A
• Maximum Collector Emitter Saturation Voltage: 0.5@50mA@500mA V
• Maximum Collector Base Voltage: 100 V
• Maximum Collector Emitter Voltage: 80 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
7. Characteristics
BC640_BCP53_BCX53_8
Product data sheet
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, mounting pad for collector 6 cm
typical values
5
duty cycle =
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
10
4
Table 8.
T
[1]
Symbol
I
I
h
V
V
C
f
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25 C unless otherwise specified.
10
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
3
h
h
p
FE
FE
selection -10
selection -16
300 s; = 0.02.
2
10
Rev. 08 — 22 February 2008
2
10
Conditions
V
V
T
V
V
V
I
I
V
V
f = 1 MHz
V
f = 100 MHz
C
B
j
CB
CB
EB
CE
CE
CE
CB
CE
1
I
I
I
I
I
= 150 C
= 500 mA;
= 50 mA
C
C
C
C
C
= 5 V; I
= 30 V; I
= 30 V; I
= 2 V
= 2 V
= 2 V; I
= 15 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BC640; BCP53; BCX53
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
80 V, 1 A PNP medium power transistors
= i
= 0 A
= 0 A;
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
-
10
Typ
-
-
-
-
-
-
-
-
-
-
15
145
2
© NXP B.V. 2008. All rights reserved.
t
p
006aaa818
(s)
Max
-
250
-
160
250
-
-
100
10
100
0.5
1
10
3
Unit
nA
nA
V
V
pF
MHz
A
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