PDTC143ES,126 NXP Semiconductors, PDTC143ES,126 Datasheet - Page 10

TRANS PNP 50V 100MA SOT54

PDTC143ES,126

Manufacturer Part Number
PDTC143ES,126
Description
TRANS PNP 50V 100MA SOT54
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC143ES,126

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934047420126
PDTC143ES AMO
PDTC143ES AMO
NXP Semiconductors
2004 Aug 05
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
10
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
PDTC143E series
L p
A
Q
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23

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