PDTC143ES,126 NXP Semiconductors, PDTC143ES,126 Datasheet - Page 2

• Manufacturer Part Number: PDTC143ES,126
• Description: TRANS PNP 50V 100MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of PDTC143ES,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934047420126; PDTC143ES AMO; PDTC143ES AMO

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 05
PDTC143EE
PDTC143EEF
PDTC143EK
PDTC143EM
PDTC143ES
PDTC143ET
PDTC143EU
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
−
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TC143E
*02
*02
E1
02
51
02
PDTC143E series
(1)
PDTA143EE
PDTA143EEF
PDTA143EK
PDTA143EM
PDTA143ES
PDTA143ET
PDTA143EU
−
−
4.7
4.7
PNP COMPLEMENT
TYP.
Product data sheet
50
100
−
−
MAX.
V
mA
kΩ
kΩ
UNIT