PDTC143ES,126 NXP Semiconductors, PDTC143ES,126 Datasheet - Page 8

TRANS PNP 50V 100MA SOT54

PDTC143ES,126

Manufacturer Part Number
PDTC143ES,126
Description
TRANS PNP 50V 100MA SOT54
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC143ES,126

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934047420126
PDTC143ES AMO
PDTC143ES AMO
NXP Semiconductors
2004 Aug 05
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
VERSION
OUTLINE
SOT883
A
0.50
0.46
(1)
max.
0.03
e
A
1
b
0.20
0.12
2
1
b
IEC
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
0.65
e
1
L 1
0.30
0.22
SC-101
L
JEITA
8
3
0.30
0.22
L
A 1
D
1
b 1
A
0
PROJECTION
EUROPEAN
scale
0.5
PDTC143E series
Product data sheet
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883

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