PDTC115ES,126 NXP Semiconductors, PDTC115ES,126 Datasheet - Page 3
PDTC115ES,126
Manufacturer Part Number
PDTC115ES,126
Description
TRANS NPN W/RES 50V TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.PDTC115EU115.pdf
(14 pages)
Specifications of PDTC115ES,126
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Resistor - Emitter Base (r2) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057567126
PDTC115ES AMO
PDTC115ES AMO
PDTC115ES AMO
PDTC115ES AMO
NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 06
PDTC115ES
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115ET
PDTC115EU
PDTC115EM
TYPE NUMBER
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
Top view
1
2
1
1
2
3
bottom view
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MHC506
MAM364
3
1
1
1
R1
R1
R2
R2
R1
MDB269
R2
3
2
3
2
2
3
PDTC115E series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION