PDTC115ES,126 NXP Semiconductors, PDTC115ES,126 Datasheet - Page 6

• Manufacturer Part Number: PDTC115ES,126
• Description: TRANS NPN W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTC115ES,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057567126; PDTC115ES AMO; PDTC115ES AMO

NXP Semiconductors
PACKAGE OUTLINES
2004 Aug 06
Plastic surface-mounted package; 3 leads
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT416
0.95
0.60
A
max
0.1
A 1
1
0.30
0.15
b p
IEC
e 1
0.25
0.10
c
D
e
1.8
1.4
b p
3
D
JEDEC
0.9
0.7
E
2
REFERENCES
e
1
w
0
B
M
B
0.5
e
1
SC-75
JEITA
scale
0.5
v
6
1.75
1.45
M
H
E
A
0.45
0.15
1 mm
L
p
A
A 1
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
PDTC115E series
L p
A
Q
c
X
Product data sheet
ISSUE DATE
04-11-04
06-03-16
SOT416