PDTC123JS,126 NXP Semiconductors, PDTC123JS,126 Datasheet

TRANS NPN W/RES 50V TO-92

PDTC123JS,126

Manufacturer Part Number
PDTC123JS,126
Description
TRANS NPN W/RES 50V TO-92
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC123JS,126

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057569126
PDTC123JS AMO
PDTC123JS AMO
Product data sheet
Supersedes data of 2003 Apr 10
DATA SHEET
PDTC123J series
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
DISCRETE SEMICONDUCTORS
2004 Aug 13

Related parts for PDTC123JS,126

PDTC123JS,126 Summary of contents

Page 1

DATA SHEET PDTC123J series NPN resistor-equipped transistors 2.2 kΩ kΩ Product data sheet Supersedes data of 2003 Apr 10 DISCRETE SEMICONDUCTORS 2004 Aug 13 ...

Page 2

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. ...

Page 3

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC123JS handbook, halfpage PDTC123JE PDTC123JEF handbook, halfpage PDTC123JK PDTC123JT PDTC123JU Top view PDTC123JM handbook, halfpage 2004 Aug 13 SIMPLIFIED OUTLINE AND SYMBOL MAM364 bottom view MHC506 3 PDTC123J series ...

Page 4

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO V input voltage I positive negative I output current (DC peak collector current CM P total power dissipation ...

Page 5

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CEO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat V input-off voltage i(off) V input-on voltage ...

Page 6

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ PACKAGE OUTLINES Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 0.30 0.25 0.95 mm 0.1 0.15 0.10 0.60 OUTLINE VERSION IEC SOT416 2004 Aug 0.5 scale 1.8 0.9 1.75 1 0.5 1.4 ...

Page 7

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 0.8 0.33 0.2 1.7 mm 0.6 0.23 0.1 1.5 OUTLINE VERSION IEC SOT490 2004 Aug scale 0.95 1.7 0.5 1.0 0.5 0.75 1.5 0.3 ...

Page 8

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 1.3 0.1 0.50 0.26 mm 1.0 0.013 0.35 0.10 OUTLINE VERSION IEC SOT346 2004 Aug scale 3.1 1.7 3.0 1.9 0.95 2.7 1.3 2.5 ...

Page 9

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC ...

Page 10

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...

Page 11

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Aug scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 12

... NXP Semiconductors NPN resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2004 Aug scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 13

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 14

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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