PDTC143XS,126 NXP Semiconductors, PDTC143XS,126 Datasheet - Page 2

• Manufacturer Part Number: PDTC143XS,126
• Description: TRANS NPN W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTC143XS,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057573126; PDTC143XS AMO; PDTC143XS AMO

NXP Semiconductors
2. Pinning information
PDTC143X_SER_10
Product data sheet
Table 3.
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23; SOT323; SOT346; SOT416; SOT490
1
2
3
SOT883
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
input (base)
GND (emitter)
output (collector)
Rev. 10 — 16 November 2009
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
Simplified outline
1
2
PDTC143X series
1
Transparent
top view
3
001aab348
006aaa144
001aab347
001aab447
2
3
1
2
3
1
2
3
1
2
3
Symbol
© NXP B.V. 2009. All rights reserved.
1
1
1
1
1
R1
R1
R1
R1
R1
006aaa145
006aaa145
006aaa145
sym007
sym007
R2
R2
R2
R2
R2
2 of 12
3
2
3
2
2
3
2
3
2
3