PDTC143ZS,126 NXP Semiconductors, PDTC143ZS,126 Datasheet - Page 3
PDTC143ZS,126
Manufacturer Part Number
PDTC143ZS,126
Description
TRANS NPN W/RES 50V TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.PDTC143ZE115.pdf
(14 pages)
Specifications of PDTC143ZS,126
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057574126
PDTC143ZS AMO
PDTC143ZS AMO
PDTC143ZS AMO
PDTC143ZS AMO
NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 16
PDTC143ZS
PDTC143ZE
PDTC143ZEF
PDTC143ZK
PDTC143ZT
PDTC143ZU
PDTC143ZM
TYPE NUMBER
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
Top view
1
2
1
1
2
3
bottom view
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MHC506
MAM364
3
1
1
1
R1
R1
R2
R2
R1
MDB269
R2
3
2
3
2
2
3
PDTC143Z series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION