DTA123JET1 ON Semiconductor, DTA123JET1 Datasheet

TRANS PNP 50V 2.2/4.7K SC75-3

DTA123JET1

Manufacturer Part Number
DTA123JET1
Description
TRANS PNP 50V 2.2/4.7K SC75-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of DTA123JET1

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DTA114EET1 Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−75/SOT−416 package which is designed for low power
surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 6
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation, FR−4 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation, FR−4 Board
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
This new series of digital transistors is designed to replace a single
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 package can be soldered using wave or reflow.
Pb−Free Packages are Available
(Note 1) @ T
Derate above 25°C
(Note 1)
(Note 2) @ T
Derate above 25°C
(Note 2)
A
A
= 25°C
= 25°C
Rating
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
P
, T
CBO
CEO
I
qJA
qJA
C
D
D
stg
−55 to
Value
Value
+150
100
200
600
300
400
1.6
2.4
50
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*Date Code orientation may vary depending
upon manufacturing location.
RESISTOR TRANSISTORS
(INPUT)
(Note: Microdot may be in either location)
BASE
PIN 1
xx
M
G
ORDERING INFORMATION
PNP SILICON BIAS
MARKING DIAGRAM
http://onsemi.com
SC−75 (SOT−416)
R1
= Specific Device Code
= Date Code*
= Pb−Free Package
R2
CASE 463
xx = (Refer to page 2)
STYLE 1
3
xx M G
1
Publication Order Number:
G
2
(GROUND)
EMITTER
COLLECTOR
PIN 2
(OUTPUT)
DTA114EET1/D
PIN 3

Related parts for DTA123JET1

DTA123JET1 Summary of contents

Page 1

DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor ...

Page 2

... DTA123EET1G DTA143EET1 43 DTA143EET1G DTA143ZET1 6K DTA143ZET1G DTA124XET1 6L DTA124XET1G DTA123JET1 6M DTA123JET1G DTA115EET1 6N DTA115EET1G DTA144WET1 6P DTA144WET1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DTA114EET1 Series R1 (K) R2 (K) Package SC−75 ...

Page 3

... DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 = 10 mA 0.3 mA) E DTA123EET1 DTA114TET1/DTA143TET1 DTA143ZET1/DTA124XET1 DTA143EET1 DTA114EET1 DTA124EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA144EET1 DTA115EET1 DTA144WET1 http://onsemi.com 3 Symbol Min Typ Max I − − 100 CBO I − − 500 CEO I − ...

Page 4

... L DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 DTA114EET1/DTA124EET1 DTA144EET1/DTA115EET1 DTA114YET1 DTA114TET1/DTA143TET1 DTA123EET1/DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA144WET1 http://onsemi.com 4 Symbol Min Typ Max V 4.9 − − 7 15.4 22 28.6 32.9 47 61.1 7 ...

Page 5

D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 Figure 2. Normalized Thermal Response DTA114EET1 Series R = 600°C/W qJA 0 50 100 150 T ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1 −25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 3. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − DTA123EET1 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 8. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EET1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 13. V versus I CE(sat ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EET1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 18. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YET1 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 23. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EET1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 29. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WET1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 34. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 0.8 0.6 0.4 ...

Page 13

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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