DTC114TET1 ON Semiconductor, DTC114TET1 Datasheet

TRANS NPN 50V 100MA 10K SC75-3

DTC114TET1

Manufacturer Part Number
DTC114TET1
Description
TRANS NPN 50V 100MA 10K SC75-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of DTC114TET1

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTC114TET1
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
DTC114TET1G
Manufacturer:
ON Semiconductor
Quantity:
2 300
DTC114EET1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−75/SOT−416 package which is designed for low power surface
mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 8
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation,
Thermal Resistance,
Total Device Dissipation,
Thermal Resistance,
Junction and Storage Temperature
This new series of digital transistors is designed to replace a single
Reflow
Soldering Eliminating the Possibility of Damage to the Die
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 Package Can be Soldered Using Wave or
The Modified Gull−Winged Leads Absorb Thermal Stress During
Pb−Free Packages are Available
FR−4 Board (Note 1) @ T
Derate above 25°C
Junction−to−Ambient (Note 1)
FR−4 Board (Note 2) @ T
Derate above 25°C
Junction−to−Ambient (Note 2)
Range
Rating
Rating
(T
A
= 25°C unless otherwise noted)
A
A
= 25°C
= 25°C
Symbol
Symbol
T
V
V
R
R
J
P
P
, T
CBO
CEO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Value
100
200
600
300
400
1.6
2.4
50
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
mW
°C
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
BIAS RESISTOR TRANSISTORS
*Date Code orientation may vary depending
upon manufacturing location.
(INPUT)
(Note: Microdot may be in either location)
BASE
PIN 1
xx
M
G
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
SC−75 (SOT−416)
= Specific Device Code
= Date Code*
= Pb−Free Package
R1
R2
CASE 463
xx = (Refer to page 2)
STYLE 1
3
xx M G
1
Publication Order Number:
G
2
(GROUND)
EMITTER
COLLECTOR
PIN 2
(OUTPUT)
DTC114EET1/D
PIN 3

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DTC114TET1 Summary of contents

Page 1

DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains ...

Page 2

... ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES Device Marking DTC114EET1 8A DTC114EET1G DTC124EET1 8B DTC124EET1G DTC144EET1 8C DTC144EET1G DTC114YET1 8D DTC114YET1G DTC114TET1 94 DTC114TET1G DTC143TET1 8F DTC143TET1G DTC123EET1 8H DTC123EET1G DTC143EET1 8J DTC143EET1G DTC143ZET1 8K DTC143ZET1G DTC124XET1 8L DTC124XET1G DTC123JET1 8M DTC123JET1G DTC115EET1 8N DTC115EET1G DTC144WET1 8P DTC144WET1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 3

... Emitter−Base Cutoff Current ( mA, I Collector−Base Breakdown Voltage (I C Collector−Emitter Breakdown Voltage (Note 2.0 mA CHARACTERISTICS (Note 3) DC Current Gain ( 5.0 mA Collector−Emitter Saturation Voltage ( mA mA) DTC123EET1 mA mA) DTC143TET1/DTC114TET1 DTC143EET1/DTC143ZET1/DTC124XET1 Output Voltage ( 1 1 1 1.0 kW ...

Page 4

... ELECTRICAL CHARACTERISTICS Characteristic Input Resistor TC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 Resistor Ratio DTC114EET1/DTC124EET1/DTC144EET1/ DTC115EET1 DTC114YET1 DTC143TET1/DTC114TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144WET1D 250 200 150 100 50 0 −50 1 0.5 0.2 0.1 0.1 0.05 0.02 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 3. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − DTC123EET1 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 8. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EET1 −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 13. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EET1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 18. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YET1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 23. V versus I CE(sat) 4 3.5 3 2.5 2 1 ...

Page 10

DTC114EET1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 28. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 29. Open Collector Inverter: Inverts the Input Signal http://onsemi.com ...

Page 11

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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