BTA208S-600F,118 NXP Semiconductors, BTA208S-600F,118 Datasheet - Page 4

• Manufacturer Part Number: BTA208S-600F,118
• Description: TRIAC 600V 8A DPAK
• Manufacturer: NXP Semiconductors

Specifications of BTA208S-600F,118

• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 30mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 25mA
• Current - Non Rep. Surge 50, 60hz (itsm): 65A, 72A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 8A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 72 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3715-2; 934055999118; BTA208S-600F /T3

Philips Semiconductors
March 2002
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
3
2
1
0
(T
IL(25 C)
-50
IGT(25°C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/°C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.10. Typical and maximum on-state characteristic.
100
10
Fig.11. Transient thermal impedance Z
1
20
25
20
15
10
commutating current, dI
dIcom/dt (A/ms)
0.01
5
0
Fig.12. Minimum, critical rate of change of
0.1
10
0
10us
IT / A
1
Rs = 0.0378 Ohms
Vo = 1.264 V
Tj = 125 C
Zth j-mb (K/W)
Tj = 25 C
40
temperature,dV
0.5
0.1ms
BTA208S series D, E and F
60
pulse width t
1ms
1
unidirectional
tp / s
VT / V
10ms
typ
1.5
Tj/˚C
com
80
com
/dt = 10 V/us
P
D
/dt versus junction
bidirectional
p
0.1s
.
Product specification
2
t
100
p
max
1s
th j-mb
2.5
120
t
Rev 2.000
, versus
F TYPE
E TYPE
10s
D TYPE
3
140