BTA212-600E,127 NXP Semiconductors, BTA212-600E,127 Datasheet
BTA212-600E,127
Specifications of BTA212-600E,127
934055322127
BTA212-600E
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BTA212-600E,127 Summary of contents
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... ˚C prior to j surge 16 0 / over any period - Product specification BTA212 series D, E and F MAX. UNIT BTA212- 600D BTA212- 600E BTA212- 600F 600 12 95 SYMBOL T2 G MAX. UNIT 1 600 12 95 105 45 100 0.5 150 125 Rev 3.000 ...
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... CONDITIONS BTA212 67 DRM(max 110 ˚C; exponential j waveform; gate open circuit V = 400 125 ˚ T(RMS gate com open circuit V = 400 125 ˚ T(RMS) dV / gate com open circuit 2 Product specification BTA212 series D, E and F MIN. TYP. MAX 1 2 MIN. MAX. ...D ...E ... ...
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... Fig.5. Maximum permissible repetitive rms on-state , for current I p 20ms TSM T time Tj initial = 25 C max 100 1000 Product specification BTA212 series D, E and F IT(RMS BT138 0 50 Tmb / C versus mounting base temperature T IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... I (25˚C Fig.11. Transient thermal impedance dIcom/dt (A/ms 100 150 (25˚C), Fig.12. Minimum critical rate of change commutating current Product specification BTA212 series D, E and F typ max 0.5 1 1 Zth j-mb (K/W) unidirectional bidirectional 0.1ms 1ms 10ms 0. j-mb pulse width 100 ...
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... Epoxy meets UL94 V0 at 1/8". June 2003 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BTA212 series D, E and F 4,5 max 1,3 5,9 min 0,6 2,4 Rev 3.000 15,8 max ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BTA212 series D, E and F Rev 3.000 ...