T1610T-6I

Manufacturer Part NumberT1610T-6I
DescriptionTRIAC 16A 600V 10MA TO-220AB INS
ManufacturerSTMicroelectronics
T1610T-6I datasheets

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Specifications of T1610T-6I

Package / CaseTO-220ABMounting TypeThrough Hole
ConfigurationSingleCurrent - Hold (ih) (max)12mA
Voltage - Off State600VCurrent - Gate Trigger (igt) (max)10mA
Current - Non Rep. Surge 50, 60hz (itsm)120A, 126ACurrent - On State (it (rms) (max)16A
Voltage - Gate Trigger (vgt) (max)1.3VTriac TypeLogic - Sensitive Gate
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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T16T
Figure 7.
Non repetitive surge peak on state
current for a sinusoidal
I TSM (A), I²t (A²s)
10000
1000
dl /dt limitation: 50 A / µs
100
10
0.01
0.10
Figure 9.
Relative variation of holding
current and latching current versus
junction temperature
I H ,
I L
[T j ] / I H , I L [T j = 25 °C]
2.5
2.0
1.5
1.0
0.5
T j (°C)
0.0
-50
-25
0
25
50
Figure 11. Relative variation of critical rate of
decrease of main current versus
junction temperature
(dl / dt) c [T j ] /
(dl / dt) c
[T j = 125 °C]
8
7
6
5
4
3
2
1
T j (°C)
0
25
50
75
Figure 8.
I GT , V GT [T j ] / I GT , V GT [T j = 25 °C]
3.0
T j initial = 25 °C
2.5
2.0
I TSM
1.5
1.0
I GT Q1-Q2-Q3
I²t
0.5
t p (ms)
0.0
1.00
10.00
-50
Figure 10. Relative variation of critical rate of
dV / dt [T j ] /
7
6
5
4
3
I L
2
I H
1
0
75
100
125
25
Figure 12. Leakage current versus junction
1.0E+00
1.0E-01
1.0E-02
1.0E-03
100
125
Doc ID 16488 Rev 2
Characteristics
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
I GT Q3
I GT Q1-Q2
T j (°C)
-25
0
25
50
75
decrease of main current versus
junction temperature
dV / dt
[T j = 125 °C]
V D = V R = 402 V
1
T j (°C)
50
75
100
temperature for different values of
blocking voltage (typical values)
I DRM /I RRM [T j ; V DRM / V RRM ] / I DRM /I RRM
[T j = 125 °C; 700 V]
V DRM = V RRM = 600 V
V DRM = V RRM = 400 V
V DRM = V RRM = 200 V
25
50
75
100
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125
125
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