MAC4DHM-1G ON Semiconductor, MAC4DHM-1G Datasheet

THYRISTOR TRIAC 4A 600V DPAK

MAC4DHM-1G

Manufacturer Part Number
MAC4DHM-1G
Description
THYRISTOR TRIAC 4A 600V DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC4DHM-1G

Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
40A @ 60Hz
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Current - On State (it (rms) (max)
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC4DHM-1G
Manufacturer:
ON
Quantity:
18 000
MAC4DHM
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
January, 2009 − Rev. 6
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
Average Gate Power
(t = 8.3 msec, T
Peak Gate Current
(Pulse Width
Peak Gate Voltage
(Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Four−Quadrant Triggering
Blocking Voltage to 600 V
On−State Current Rating of 4.0 A RMS at 93 C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2009
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
J
DRM
= −40 to 110 C, Sine Wave,
and V
RRM
10 msec, T
20 msec, T
20 msec, T
C
= 93 C)
Rating
for all types can be applied on a continuous basis. Blocking
Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
(T
J
C
C
C
J
= 110 C)
= 25 C unless otherwise noted)
= 93 C)
= 93 C)
= 93 C)
Preferred Device
C
= 93 C)
Symbol
I
P
V
V
T(RMS)
I
P
V
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
GM
stg
2
J
t
−40 to 110
−40 to 150
Value
600
4.0
6.6
2.0
1.0
4.0
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
1 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
3
1
2
3
4
Y
WW
AC4DHM = Device Code
G
MT2
ORDERING INFORMATION
4
4.0 AMPERES RMS
4
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
600 VOLTS
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= Pb−Free Package
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
DIAGRAMS
MARKING
G
MAC4DHM/D
MT1
4DHMG
YWW
4DHMG
AC
YWW
AC

Related parts for MAC4DHM-1G

MAC4DHM-1G Summary of contents

Page 1

... DIAGRAMS 4 DPAK YWW CASE 369C AC STYLE 6 4DHMG 3 4 DPAK−3 YWW CASE 369D AC STYLE 6 4DHMG Year WW = Work Week AC4DHM = Device Code G = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Publication Order Number: MAC4DHM/D ...

Page 2

... Duty Cycle ORDERING INFORMATION Device MAC4DHM−001 MAC4DHM−001G MAC4DHMT4 MAC4DHMT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ unless otherwise noted; Electricals apply in both directions) J ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off−State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off−State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On−State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

CONDUCTION ANGLE 90 0 0.5 1.0 1.5 2.0 2 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 1. RMS Current Derating 100 TYPICAL @ MAXIMUM ...

Page 5

... MT2 NEGATIVE 2.0 MT2 POSITIVE 1.0 0 -40 -25 -10 5 JUNCTION TEMPERATURE ( C) J Figure 7. Typical Holding Current versus Junction Temperature MAC4DHM 100 1000 GATE-MT1 RESISTANCE (OHMS) Figure 9. Minimum Exponential Static dv/dt versus Gate−MT1 Resistance 200 V RMS ADJUST FOR CHARGE TRIGGER CONTROL CHARGE NON‐ ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− SEATING PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 ...

Page 7

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MAC4DHM/D ...

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