BTB16H-600BW3G ON Semiconductor, BTB16H-600BW3G Datasheet

BTB16H-600BW3G

Manufacturer Part Number

BTB16H-600BW3G

Description

TRIAC 16A 600V TO-220AB

Manufacturer

ON Semiconductor

Datasheet

1.BTB16-600BW3G.pdf (6 pages)

Specifications of BTB16H-600BW3G

Triac Type

Standard

Mounting Type

Through Hole

Configuration

Single

Current - Hold (ih) (max)

60mA

Voltage - Off State

600V

Current - Gate Trigger (igt) (max)

50mA

Current - Non Rep. Surge 50, 60hz (itsm)

170A @ 60Hz

Current - On State (it (rms)) (max)

16A

Voltage - Gate Trigger (vgt) (max)

1.1V

Package / Case

TO-220-3

Current - On State (it (rms) (max)

16A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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BTB16-600BW3G,

BTB16-700BW3G,

BTB16-800BW3G

Triacs

Silicon Bidirectional Thyristors

where high noise immunity and high commutating di/dt are required.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

MAXIMUM RATINGS

May, 2009 − Rev. 2

Peak Repetitive Off−State Voltage (Note 1)

50 to 60 Hz, Gate Open)

On-State RMS Current

(Full Cycle Sine Wave, 60 Hz, T

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

Circuit Fusing Consideration (t = 8.3 ms)

Non−Repetitive Surge Peak Off−State

Voltage (T

Peak Gate Current (T

Average Gate Power (T

Operating Junction Temperature Range

Storage Temperature Range

Designed for high performance full-wave ac control applications

Blocking Voltage to 800 V

On-State Current Rating of 16 A RMS at 80°C

Uniform Gate Trigger Currents in Three Quadrants

High Immunity to dV/dt − 1500 V/ms minimum at 125°C

Minimizes Snubber Networks for Protection

Industry Standard TO-220AB Package

High Commutating dI/dt − 7.5 A/ms minimum at 125°C

These are Pb−Free Devices

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

= 25°C)

DRM

= −40 to 125°C, Sine Wave,

and V

= 25°C, t = 8.3 ms)

RRM

Rating

for all types can be applied on a continuous basis. Blocking

= 125°C, t ≤ 20 ms)

BTB16−600BW3G

BTB16−700BW3G

BTB16−800BW3G

= 125°C)

= 25°C unless otherwise noted)

= 80°C)

Symbol

T(RMS)

TSM

G(AV)

DRM,

DSM/

RRM

RSM

stg

−40 to +125

−40 to +150

DSM/

Value

+100

600

700

800

170

120

4.0

1.0

RSM

Unit

°C

sec

*For additional information on our Pb−Free strategy and

BTB16−600BW3G

BTB16−700BW3G

BTB16−800BW3G

soldering details, please download the ON Semicon-

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

Device

MT2

ORDERING INFORMATION

600 thru 800 VOLTS

16 AMPERES RMS

= 6, 7 or 8

= Assembly Location

= Year

= Work Week

= Pb−Free Package

http://onsemi.com

PIN ASSIGNMENT

CASE 221A

TO−220AB

STYLE 4

TRIACS

TO−220AB

(Pb−Free)

Package

Main Terminal 1

Main Terminal 2

Publication Order Number:

Gate

BTB16−600BW3/D

BTB16−xBWG

MARKING

DIAGRAM

50 Units / Rail

MT1

AYWW

Shipping

Related parts for BTB16H-600BW3G

BTB16H-600BW3G Summary of contents

Page 1

... BTB16−600BW3G BTB16−700BW3G BTB16−800BW3G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semicon- ductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 http://onsemi.com TRIACS 16 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G MARKING 4 DIAGRAM BTB16−xBWG TO− ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

I , RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 1. Typical RMS Current Derating 100 TYPICAL 25°C J ...

Page 5

−40 −25 − JUNCTION TEMPERATURE (°C) J Figure 6. Typical Gate Trigger Current Variation 200 V RMS ADJUST FOR CHARGE ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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