BTA25-600CW3G ON Semiconductor, BTA25-600CW3G Datasheet

IC TRIAC 25A 600V ISO TO220-3

BTA25-600CW3G

Manufacturer Part Number
BTA25-600CW3G
Description
IC TRIAC 25A 600V ISO TO220-3
Manufacturer
ON Semiconductor
Type
TRIACr
Datasheet

Specifications of BTA25-600CW3G

Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
50mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
250A @ 60Hz
Current - On State (it (rms)) (max)
25A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
25A
Repetitive Peak Off-state Volt
600V
Off-state Voltage
600V
Hold Current
50mA
Gate Trigger Current (max)
35mA
Gate Trigger Voltage (max)
1.3V
Package Type
TO-220AB
Peak Repeat Off Current
5uA
Peak Surge On-state Current (max)
250A
On State Voltage(max)
1.55@35AV
Mounting
Through Hole
Pin Count
3 +Tab
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number:
BTA25-600CW3G
Manufacturer:
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0
BTA25-600CW3G,
BTA25-800CW3G
Triacs
Silicon Bidirectional Thyristors
where high noise immunity and high commutating di/dt are required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 0
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, T
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (T
Peak Gate Current (T
Average Gate Power (T
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, T
Designed for high performance full-wave ac control applications
C
Blocking Voltage to 800 Volts
On-State Current Rating of 25 Amperes RMS at 95°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package − Internally Isolated
High Commutating dI/dt − 4.0 A/ms minimum at 125°C
Internally Isolated (2500 V
These are Pb−Free Devices
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
= 25°C)
DRM
= −40 to 125°C, Sine Wave,
and V
J
= 25°C, t = 8.3 ms)
RRM
C
Rating
= 95°C)
for all types can be applied on a continuous basis. Blocking
J
J
= 125°C, t ≤ 20 ms)
BTA25−600CW3G
BTA25−800CW3G
= 125°C)
(T
J
A
= 25°C unless otherwise noted)
= 25°C)
RMS
)
Symbol
I
P
V
V
V
T(RMS)
V
I
I
T
V
TSM
G(AV)
DRM,
DSM/
RRM
RSM
I
GM
T
2
stg
iso
J
t
V
−40 to +125
−40 to +150
DRM
Value
+100
2500
600
800
250
260
4.0
0.5
25
/V
RRM
1
A
Unit
2
°C
°C
W
V
A
A
V
A
V
sec
*For additional information on our Pb−Free strategy and
BTA25−600CW3G
BTA25−800CW3G
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1
2
x
A
Y
WW
G
3
1
2
3
4
Device
MT2
ORDERING INFORMATION
600 thru 800 VOLTS
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
25 AMPERES RMS
4
http://onsemi.com
PIN ASSIGNMENT
CASE 221A
TO−220AB
STYLE 12
TRIACS
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
Package
Publication Order Number:
Main Terminal 1
Main Terminal 2
No Connection
Gate
BTA25−600CW3/D
BTA25−xCWG
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
MT1
Shipping
AYWW

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BTA25-600CW3G Summary of contents

Page 1

... BTA25-600CW3G, BTA25-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS at 95°C • Uniform Gate Trigger Currents in Three Quadrants • ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

I , RMS ON-STATE CURRENT (A) T(RMS) Figure 1. RMS Current Derating 1000 100 125° 25° 0.1 0 ...

Page 5

−40 −25 − JUNCTION TEMPERATURE (°C) J Figure 6. Gate Trigger Current Variation 5000 100 R , GATE ...

Page 6

... U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 12: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BTA25−600CW3/D ...

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