MAC4DSMT4 ON Semiconductor, MAC4DSMT4 Datasheet

THYRISTOR TRIAC 4A 600V DPAK

MAC4DSMT4

Manufacturer Part Number
MAC4DSMT4
Description
THYRISTOR TRIAC 4A 600V DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC4DSMT4

Triac Type
Logic - Sensitive Gate
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
40A @ 60Hz
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - On State (it (rms) (max)
4A
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MAC4DSMT4OSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC4DSMT4
Manufacturer:
ON
Quantity:
18 000
Part Number:
MAC4DSMT4G
Manufacturer:
ON
Quantity:
2 500
MAC4DSM, MAC4DSN
Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
January, 2009 − Rev. 6
Peak Repetitive Off−State Voltage
On−State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Consideration
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On−State Current Rating of 4.0 Amperes RMS at 108 C
Low IGT − 10 mA Maximum in 3 Quadrants
High Immunity to dv/dt − 50 V/ms at 125 C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2009
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(Note 1) (T
Wave, 50 to 60 Hz, Gate Open)
(Full Cycle Sine Wave, 60 Hz,
T
(One Full Cycle Sine Wave, 60 Hz,
T
(t = 8.3 msec)
(Pulse Width
(t = 8.3 msec, T
(Pulse Width
(Pulse Width
DRM
C
J
= 125 C)
= 108 C)
and V
J
RRM
= −40 to 125 C, Sine
Rating
Machine Model, C u 400 V
10 msec, T
20 msec, T
20 msec, T
C
for all types can be applied on a continuous basis. Blocking
= 108 C)
(T
J
= 25 C unless otherwise noted)
MAC4DSM
MAC4DSN
C
C
C
Preferred Device
= 108 C)
= 108 C)
= 108 C)
Symbol
I
P
V
V
T(RMS)
I
P
V
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
GM
stg
2
J
t
−40 to 125
−40 to 150
Value
600
800
4.0
6.6
2.0
1.0
4.0
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 2
1
2
3
3
1
2
3
4
Y
WW
AC4DSx
G
MT2
ORDERING INFORMATION
4.0 AMPERES RMS
4
4
600 − 800 VOLTS
PIN ASSIGNMENT
http://onsemi.com
CASE 369C
CASE 369D
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= Device Code
= Pb−Free Package
x= M or N
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
DIAGRAMS
G
MARKING
MAC4DSM/D
MT1
4DSxG
YWW
AC
4DSxG
YWW
AC

Related parts for MAC4DSMT4

MAC4DSMT4 Summary of contents

Page 1

... See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com TRIACS 4.0 AMPERES RMS 600 − 800 VOLTS MT2 MT1 G MARKING ...

Page 2

... Duty Cycle ORDERING INFORMATION Device MAC4DSM−001 MAC4DSM−001G MAC4DSMT4 MAC4DSMT4G MAC4DSN−001 MAC4DSN−001G MAC4DSNT4 MAC4DSNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off−State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off−State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On−State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

CONDUCTION ANGLE 105 0 0.5 1.0 1.5 2.0 2 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 1. RMS Current Derating 100 TYPICAL @ MAXIMUM @ ...

Page 5

MT2 NEGATIVE 8.0 6.0 MT2 POSITIVE 4.0 2.0 0 -50 - JUNCTION TEMPERATURE ( C) J Figure 7. Typical Holding Current versus Junction Temperature 1000 800 600 V = 400 V 400 ...

Page 6

V = 400 V 600 PK 400 600 V 200 800 V 0 100 105 110 115 T , JUNCTION TEMPERATURE ( C) J Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) 100 10 V 1.0 0 ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− SEATING PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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