BB201,215 NXP Semiconductors, BB201,215 Datasheet

DIODE VAR CAP DUAL 15V SOT-23

BB201,215

Manufacturer Part Number
BB201,215
Description
DIODE VAR CAP DUAL 15V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BB201,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Capacitance @ Vr, F
25.5pF @ 8V, 1MHz
Capacitance Ratio
3.8
Capacitance Ratio Condition
C1/C7.5
Voltage - Peak Reverse (max)
15V
Diode Type
1 Pair Common Cathode
Mounting Type
Surface Mount
Capacitance
89 pF @ 1 V
Reverse Voltage
15 V
Configuration
Dual Common Cathode
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Minimum Tuning Ratio
3.1
Mounting Style
SMD/SMT
Tuning Ratio Test Condition
1 V/7.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1952-2
934056470215
BB201 T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BB201
Low-voltage variable capacitance
double diode
Product specification
2001 Oct 12

Related parts for BB201,215

BB201,215 Summary of contents

Page 1

DATA SHEET dbook, halfpage BB201 Low-voltage variable capacitance double diode Product specification DISCRETE SEMICONDUCTORS M3D088 2001 Oct 12 ...

Page 2

... NXP Semiconductors Low-voltage variable capacitance double diode FEATURES  Excellent linearity  C1: 95 pF; C7.5: 27.6 pF  C7.5 ratio: min. 3.1  Very low series resistance  Small plastic SMD package. APPLICATIONS  Electronic tuning in FM-radio  Voltage Controlled Oscillators (VCO). DESCRIPTION ...

Page 3

... NXP Semiconductors Low-voltage variable capacitance double diode CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER Per diode I reverse current R r diode series resistance S C diode capacitance d capacitance ratio C   ------------------- - C   d 7.5V GRAPHICAL DATA 140 handbook, full pagewidth C d (pF) 120 100 ...

Page 4

... NXP Semiconductors Low-voltage variable capacitance double diode 3 10 handbook, halfpage I R (nA Fig.3 Reverse current as a function of junction temperature; maximum values. 2001 Oct 12 MGU478 handbook, halfpage 60 80 100 T j (°C) 4 − − −4 10 −5 10 − Fig.4 Temperature coefficient of diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Low-voltage variable capacitance double diode PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2001 Oct scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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