1SV277TPH3F Toshiba, 1SV277TPH3F Datasheet

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1SV277TPH3F

Manufacturer Part Number
1SV277TPH3F
Description
DIODE VARICAP VCO UHF 1-1E1A
Manufacturer
Toshiba
Datasheet

Specifications of 1SV277TPH3F

Capacitance @ Vr, F
2.35pF @ 4V, 1MHz
Capacitance Ratio
2.3
Capacitance Ratio Condition
C1/C4
Voltage - Peak Reverse (max)
10V
Diode Type
Single
Mounting Type
Surface Mount
Package / Case
1-1E1A
Capacitance
4 pF @ 1 V
Reverse Voltage
10 V
Applications Frequency Range
UHF
Configuration
Single
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Minimum Tuning Ratio
2
Mounting Style
SMD/SMT
Tuning Ratio Test Condition
1 V/4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
VCO for UHF Band Radio
Absolute Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C
Low series resistance: r
Small package
Reverse voltage
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
Characteristics
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
s
= 0.42 Ω (typ.)
1 V
/C
4 V
(Ta = 25°C)
= 2.3 (typ.)
(Ta = 25°C)
C
Symbol
Symbol
1 V
C
C
T
V
V
I
T
r
1 V
4 V
stg
R
/C
s
R
R
j
4 V
1SV277
I
V
V
V
V
R
R
R
R
R
= 1 μA
−55~125
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
Rating
125
10
1
Test Condition
Unit
°C
°C
V
Weight: 0.004 g (typ.)
JEDEC
JEITA
TOSHIBA
1.85
Min
4.0
2.0
10
Typ.
0.42
4.5
2.0
2.3
1-1E1A
2007-11-01
2.35
0.55
Max
4.9
3
1SV277
Unit: mm
Unit
nA
pF
pF
Ω
V

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1SV277TPH3F Summary of contents

Page 1

... TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio • High capacitance ratio • Low series resistance 0.42 Ω (typ.) s • Small package Absolute Maximum Ratings Characteristics Reverse voltage Junction temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc ...

Page 2

C (Ta) C (25) δ = Note (25) 2 1SV277 × 100 (%) 2007-11-01 ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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