JDV2S01ETH3FT Toshiba, JDV2S01ETH3FT Datasheet
JDV2S01ETH3FT
Specifications of JDV2S01ETH3FT
Related parts for JDV2S01ETH3FT
JDV2S01ETH3FT Summary of contents
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... TOSHIBA Diode Silicon Epitaxial Planar Type VCO for UHF band • Small Package • High Capacitance Ratio • Low Series Resistance 0.5 Ω (typ.) s Absolute Maximum Ratings Characteristics Reverse voltage Junction temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc ...
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C – MHz V sig = 100 m Vrms Reverse voltage V R (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...