1SV331TH3FT Toshiba, 1SV331TH3FT Datasheet
1SV331TH3FT
Specifications of 1SV331TH3FT
Related parts for 1SV331TH3FT
1SV331TH3FT Summary of contents
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... TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Useful for VCO/TCXO • Small Package • High Capacitance Ratio : • Low Series Resistance : r = 0.45 Ω (typ.) s Absolute Maximum Ratings Characteristics Reverse voltage Junction temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc ...
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C – 100 MHz V sig = 100 m Vrms 1.0 2.0 3.0 4.0 5.0 Reverse voltage V R (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 6.0 0.1 Reverse voltage ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...