1SV262TPH3F Toshiba, 1SV262TPH3F Datasheet
1SV262TPH3F
Manufacturer Part Number
1SV262TPH3F
Description
DIODE VARICAP 34V 1-1E1A
Manufacturer
Toshiba
Datasheet
1.1SV262TPH3F.pdf
(3 pages)
Specifications of 1SV262TPH3F
Capacitance @ Vr, F
3pF @ 25V, 1MHz
Capacitance Ratio
12.5
Capacitance Ratio Condition
C2/C25
Voltage - Peak Reverse (max)
34V
Diode Type
Single
Mounting Type
Surface Mount
Package / Case
1-1E1A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q @ Vr, F
-
CATV Tuning
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C2 V/C25 V = 12.5 (typ.)
Low series resistance: rs = 0.6 Ω (typ.)
Excellent C-V characteristics, and small tracking error.
Small package
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Capacitance ratio
Series resistance
Note 1: Available in matched group for capacitance to 2.0%.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
C
(max)
Characteristics
Characteristics
C
(min)
−
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
C
(min)
< = 0.02 (V
(Ta = 25°C)
C25 V/C28 V
R
C2 V/C25 V
(Ta = 25°C)
= 2~25 V)
Symbol
Symbol
C25 V
C2 V
V
T
V
V
I
T
r
RM
stg
R
s
R
R
j
1SV262
36 (R
I
V
V
V
V
R
R
R
R
R
= 1 μA
−55~125
= 32 V
= 2 V, f = 1 MHz
= 25 V, f = 1 MHz
= 5 V, f = 470 MHz
Rating
L
125
34
= 10 kΩ)
1
Test Condition
⎯
⎯
Unit
°C
°C
V
V
Weight: 0.004 g (typ.)
JEDEC
JEITA
TOSHIBA
12.0
1.03
Min
2.6
34
33
⎯
⎯
Typ.
35.5
2.85
12.5
0.6
⎯
⎯
⎯
1-1E1A
2007-11-01
―
―
Max
3.0
0.8
10
38
⎯
⎯
⎯
1SV262
Unit: mm
Unit
nA
pF
pF
⎯
⎯
Ω
V
Related parts for 1SV262TPH3F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
VARIABLE CAPACITANCE DIODE (CATV TUNING)
Manufacturer:
Toshiba Semiconductor
Datasheet:
Part Number:
Description:
DIODE VAR CAP SINGLE 34V 33PF 2(1-1E1A) T/R
Manufacturer:
Toshiba
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
1SV262TPH3F Summary of contents
Page 1
... TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type CATV Tuning • High capacitance ratio: C2 V/C25 V = 12.5 (typ.) • Low series resistance 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error. • Small package Absolute Maximum Ratings Characteristics Reverse voltage ...
Page 2
C (Ta) C (25) δ = Note (25) 2 1SV262 × 100 (%) 2007-11-01 ...
Page 3
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...