NTMD5836NLR2G

Manufacturer Part NumberNTMD5836NLR2G
DescriptionNFET SO8-D 40V 10MO 25MO
ManufacturerON Semiconductor
Series-
NTMD5836NLR2G datasheet
 


Specifications of NTMD5836NLR2G

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs12 mOhm @ 10A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C9A, 5.7AVgs(th) (max) @ Id3V @ 250µA
Gate Charge (qg) @ Vgs50nC @ 10VInput Capacitance (ciss) @ Vds2120pF @ 20V
Power - Max1.5WMounting Type*
Package / Case8-SOIC (0.154", 3.90mm Width)Lead Free Status / Rohs Status Details
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NTMD5836NL
Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
Asymmetrical N Channels
Low R
DS(on)
Low Capacitance
Optimized Gate Charge
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
(BR)DSS
DS(on)
Channel 1
40 V
12 mW @ 10 V
16 mW @ 4.5 V
Channel 2
40 V
25 mW @ 10 V
30.8 mW @ 4.5 V
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Only selected channel is been powered
1W applied on channel 1: T
= 1 W * 85°C/W + 25°C = 110°C
J
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 0
I
Max
D
G1
(Notes 1 and 2)
Max
11 A
6.5 A
8
SOIC−8
CASE 751
(Note: Microdot may be in either location)
Device
NTMD5836NLR2G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
1
http://onsemi.com
N−Channel 1
N−Channel 2
D1
D2
G2
S1
S2
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
1
5836NL
AYWW G
G
1
S1 G1 S2 G2
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
SOIC−8
2500 /
(Pb−Free)
Tape & Reel
Publication Order Number:
NTMD5836NL/D

NTMD5836NLR2G Summary of contents

  • Page 1

    ... Max SOIC−8 CASE 751 (Note: Microdot may be in either location) Device NTMD5836NLR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D 1 http://onsemi.com N−Channel 1 N−Channel 2 ...

  • Page 2

    MAXIMUM RATINGS (T = 25°C unless otherwise stated) J Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current R (Notes 3 and 4) θJA Power Dissipation R (Notes 3 and 4) θJA Continuous Drain Current R (Notes 3 and 4) θJA ...

  • Page 3

    ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain−to−Source Breakdown V Voltage Drain−to−Source Breakdown V Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Negative Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward ...

  • Page 4

    ELECTRICAL CHARACTERISTICS Parameter Symbol CHARGES, CAPACITANCES & GATE RESISTANCE Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 10) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS ...

  • Page 5

    DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics − Channel 1 0.035 0.03 0.025 0.02 0.015 0.01 ...

  • Page 6

    C iss 2000 1500 1000 500 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation − Channel 1 1000 4.5 ...

  • Page 7

    DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics − Channel 2 0.05 0.04 0.03 0.02 0. ...

  • Page 8

    C 200 oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation − Channel 2 1000 ...

  • Page 9

    TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

  • Page 10

    ... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...