NTMD5836NLR2G ON Semiconductor, NTMD5836NLR2G Datasheet

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NTMD5836NLR2G

Manufacturer Part Number
NTMD5836NLR2G
Description
NFET SO8-D 40V 10MO 25MO
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of NTMD5836NLR2G

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A, 5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2120pF @ 20V
Power - Max
1.5W
Mounting Type
*
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / Rohs Status
 Details

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NTMD5836NL
Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
2. Only selected channel is been powered
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 0
Compliant
Asymmetrical N Channels
Low R
Low Capacitance
Optimized Gate Charge
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
sq [2 oz] including traces)
Channel 1
Channel 2
1W applied on channel 1: T
DS(on)
V
(BR)DSS
40 V
40 V
J
= 1 W * 85°C/W + 25°C = 110°C
30.8 mW @ 4.5 V
16 mW @ 4.5 V
12 mW @ 10 V
25 mW @ 10 V
R
DS(on)
Max
(Notes 1 and 2)
I
D
6.5 A
11 A
Max
1
†For information on tape and reel specifications,
NTMD5836NLR2G
G1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
(Note: Microdot may be in either location)
CASE 751
Device
8
SOIC−8
N−Channel 1
A
Y
WW
G
ORDERING INFORMATION
1
D1
http://onsemi.com
S1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AND PIN ASSIGNMENT
(Pb−Free)
MARKING DIAGRAM*
Package
SOIC−8
Publication Order Number:
8
1
G2
D1 D1 D2 D2
S1 G1 S2 G2
AYWW G
5836NL
N−Channel 2
G
NTMD5836NL/D
Tape & Reel
D2
Shipping
2500 /
S2

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NTMD5836NLR2G Summary of contents

Page 1

... Max SOIC−8 CASE 751 (Note: Microdot may be in either location) Device NTMD5836NLR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D 1 http://onsemi.com N−Channel 1 N−Channel 2 ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise stated) J Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current R (Notes 3 and 4) θJA Power Dissipation R (Notes 3 and 4) θJA Continuous Drain Current R (Notes 3 and 4) θJA ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain−to−Source Breakdown V Voltage Drain−to−Source Breakdown V Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Negative Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward ...

Page 4

ELECTRICAL CHARACTERISTICS Parameter Symbol CHARGES, CAPACITANCES & GATE RESISTANCE Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 10) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS ...

Page 5

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics − Channel 1 0.035 0.03 0.025 0.02 0.015 0.01 ...

Page 6

C iss 2000 1500 1000 500 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation − Channel 1 1000 4.5 ...

Page 7

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics − Channel 2 0.05 0.04 0.03 0.02 0. ...

Page 8

C 200 oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation − Channel 2 1000 ...

Page 9

TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 10

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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