NTMD5836NLR2G ON Semiconductor, NTMD5836NLR2G Datasheet - Page 2

• Manufacturer Part Number: NTMD5836NLR2G
• Description: NFET SO8-D 40V 10MO 25MO
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMD5836NLR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 20V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Details

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Only selected channel is been powered
5. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
6. Surface−mounted on FR4 board using 0.155 in sq (100 mm
7. Only selected channel is been powered
8. Both channels receive equivalent power dissipation
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
Power Dissipation R
Continuous Drain Current R
Power Dissipation R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (V
Lead Temperature for Soldering Purposes (1/8” from case for 10s)
Junction−to−Ambient Steady State (Notes 5 and 7)
Junction−to−Ambient – t v 10 s (Notes 5 and 7)
Junction−to−Ambient Steady State (Notes 5 and 8)
Junction−to−Ambient Steady State (Notes 6 and 7)
1W applied on channel 1: T
1W applied on channel 1: T
1 W applied on each channel: T
θJA
θJA
(Notes 3 and 4)
(Notes 3 and 4)
(T
J
θJA
θJA
= 25°C unless otherwise stated)
(Notes 3 and 4)
(Notes 3 and 4)
J
J
= 1 W * 85°C/W + 25°C = 110°C
= 1 W * 85°C/W + 25°C = 110°C
J
= 2 W * 59°C/W + 25°C = 143°C
Parameter
Parameter
DD
= 40 V, V
http://onsemi.com
2
) pad size
GS
t v 10s
t
Steady
p
2
State
= 10 V, L = 0.1 mH)
= 10 ms
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
T
Symbol
Symbol
J
V
R
R
R
R
V
, T
E
I
I
P
P
DSS
DM
T
I
I
I
AS
θJA
θJA
θJA
θJA
GS
AS
D
D
S
D
D
L
STG
Ch 1
Ch 1
$20
136
9.0
7.2
1.5
0.9
8.6
2.1
1.3
85
60
40
11
43
10
76
39
−55 to +150
260
59
Ch 2
Ch 2
$20
136
5.7
4.6
1.5
0.9
6.5
4.6
1.9
1.2
7.0
86
65
40
26
22
21
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
A