NTMD5836NLR2G ON Semiconductor, NTMD5836NLR2G Datasheet - Page 5

• Manufacturer Part Number: NTMD5836NLR2G
• Description: NFET SO8-D 40V 10MO 25MO
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMD5836NLR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 20V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Details

0.035
0.015
0.025
0.03
0.02
0.01
1.6
1.4
1.2
0.8
70
60
50
40
30
20
10
0
1
−50
0
2
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
10V
GS
= 10 A
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics −
−25
3
= 4.5 V
V
V
DS
GS
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
8.5 V
4
0
Temperature − Channel 1
6.5 V
4.5 V
Voltage − Channel 1
25
5
5.5 V
2
Channel 1
50
6
3
TYPICAL PERFORMANCE CURVES
75
7
3.9 V
3.5 V
V
100
3.1 V
8
GS
T
I
D
T
J
4
= 2.5 V
= 10 A
J
= 25°C
http://onsemi.com
= 25°C
125
9
150
10
5
5
100000
10000
0.015
0.005
1000
0.02
0.01
70
60
50
40
30
20
10
0
10
2
2
Figure 4. On−Resistance vs. Drain Current and
Figure 2. Transfer Characteristics − Channel 1
V
T
V
Figure 6. Drain−to−Source Leakage Current
J
DS
GS
V
= 25°C
T
DS
≥ 20 V
= 0 V
J
V
= 25°C
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
Gate Voltage − Channel 1
T
J
vs. Voltage − Channel 1
= 125°C
I
D,
20
3
DRAIN CURRENT (A)
T
T
J
J
= 150°C
= 125°C
T
10
V
V
J
GS
GS
= −55°C
= 4.5 V
= 10 V
30
14
4
18
40
5