NTMD5836NLR2G ON Semiconductor, NTMD5836NLR2G Datasheet - Page 8

• Manufacturer Part Number: NTMD5836NLR2G
• Description: NFET SO8-D 40V 10MO 25MO
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMD5836NLR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 20V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Details

0.001
1000
1000
1200
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
Figure 11. Maximum Rated Forward Biased
V
SINGLE PULSE
T
V
I
V
Figure 7. Capacitance Variation − Channel 2
D
C
GS
DD
GS
Variation vs. Gate Resistance − Channel 2
= 7 A
= 25°C
C
t
d(on)
= 20 V
= 20 V
= 4.5 V
rss
V
V
Safe Operating Area − Channel 2
Figure 9. Resistive Switching Time
C
DS
DS
t
f
oss
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
10
R
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (W)
DS(on)
1
LIMIT
20
10
TYPICAL PERFORMANCE CURVES
10
C
iss
dc
30
V
T
J
GS
= 25°C
http://onsemi.com
t
= 0 V
t
d(off)
r
100 ms
1 ms
10 ms
1 ms
100
100
40
8
12
10
10
20
15
10
8
6
4
2
0
8
6
4
2
0
5
0
0.2
0
25
Q
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
GS
Drain−To−Source Voltage vs. Total Charge
GS
J
T
= 25°C
J
0.3
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
SD
Starting Junction Temperature
Figure 8. Gate−To−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
50
Q
0.4
G
Q
, TOTAL GATE CHARGE (nC)
GD
5
0.5
− Channel 2
75
Q
T
0.6
10
100
0.7
0.8
V
I
T
D
DS
J
I
125
= 7 A
D
= 25°C
= 20 V
= 21 A
15
0.9
150
1