PIC16F1829-E/P Microchip Technology, PIC16F1829-E/P Datasheet - Page 363

14 KB Flash, 1K Bytes RAM, 32 MHz Int. Osc, 18 I/0, Enhanced Mid Range Core 20 P

PIC16F1829-E/P

Manufacturer Part Number
PIC16F1829-E/P
Description
14 KB Flash, 1K Bytes RAM, 32 MHz Int. Osc, 18 I/0, Enhanced Mid Range Core 20 P
Manufacturer
Microchip Technology
Series
PIC® XLP™ mTouch™ 16Fr
Datasheet

Specifications of PIC16F1829-E/P

Core Processor
PIC
Core Size
8-Bit
Speed
32MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
17
Program Memory Size
14KB (8K x 14)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
*
Processor Series
PIC16F182x
Core
PIC
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
32 MHz
Number Of Programmable I/os
18
Number Of Timers
5
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
30.5
 2010 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D111
D112
D113
D114
D115
D116
D117
D118
D119
D120
D121
D122
D123
D124
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
Memory Programming Requirements
V
I
V
I
I
E
V
T
T
T
E
V
T
T
DDP
PPPGM
DDPGM
Sym.
RETD
REF
IW
RETD
PEW
DEW
IHH
D
DRW
P
PR
only and are not tested.
Self-write and Block Erase.
Refer to
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
be placed between the MPLAB ICD 2 and target system when programming or debugging with the MPLAB
ICD 2.
Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
V
V
Current on MCLR/V
Write
Current on V
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
Section 11.2 “Using the Data EEPROM”
for Bulk Erase
for Write or Row Erase
for Read/Write
for Read
Characteristic
DD
during Erase/Write
PP
PP
during Erase/
/RA5 pin
(2)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
100K
Min.
min.
min.
10K
min.
V
V
V
8.0
1M
2.7
40
40
PP
DD
DD
DD
output. Circuitry to limit the MPLAB ICD 2 V
for a more detailed discussion on data EEPROM
PIC16F/LF1825/1829
Typ†
10M
4.0
2
Max.
max.
max.
max.
max.
V
V
V
V
9.0
5.0
2.5
1.0
5.0
10
DD
DD
DD
DD
Units
Year
Year
E/W
E/W
E/W
mA
mA
mA
ms
ms
A
V
V
V
V
V
 +125°C
(Note 3, Note 4)
-40C to +85C
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 1)
Provided no other
specifications are violated
Conditions
DS41440A-page 365
PP
voltage must

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