PIC24F16KA102-E/ML Microchip Technology, PIC24F16KA102-E/ML Datasheet - Page 223

• Manufacturer Part Number: PIC24F16KA102-E/ML
• Description: 16KB Flash, 1.5KB RAM, 512B EEPROM, 16 MIPS, 24 I/O,16-bit PIC24F Family, NanoWa
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 24Fr

Specifications of PIC24F16KA102-E/ML

• Core Processor: PIC
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: I²C, IrDA, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 24
• Program Memory Size: 16KB (5.5K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Processor Series: PIC24F
• Core: PIC
• 3rd Party Development Tools: 52713-733, 52714-737, 53276-922, EWDSPIC
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, DM240001
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TABLE 29-10: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY
TABLE 29-12: DC CHARACTERISTICS: DATA EEPROM MEMORY
© 2009 Microchip Technology Inc.
DC CHARACTERISTICS
DO10
DO16
DO20
DO26
Note 1:
DC CHARACTERISTICS
D130
D131
D133A
D134
D135
Note 1:
DC CHARACTERISTICS
D140
D141
D143A
D143B
D144
D145
Note 1:
Param
Param
Param
No.
No.
No.
2:
V
V
E
V
T
T
I
E
V
T
T
T
I
OL
OH
DDP
DDPD
Sym
Data in “Typ” column is at 25°C unless otherwise stated. Parameters are for design guidance only and are not
tested.
Sym
IW
RETD
Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
Self-write and block erase.
IWD
REF
RETDD
Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
P
PR
Sym
PD
PRD
Output Low Voltage
All I/O Pins
OSC2/CLKO
Output High Voltage
All I/O Pins
OSC2/CLKO
Program Flash Memory
Cell Endurance
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current During
Programming
Data EEPROM Memory
Cell Endurance
V
Self-Timed Write Cycle
Time
Number of Total Write/Erase
Cycles Before Refresh
Characteristic Retention
Supply Current during
Programming
DD
DD
for Read
for Read
Characteristic
Characteristic
Characteristic
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
Operating temperature
10,000
100,000
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
Operating temperature
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
Operating temperature
Min
1.8
1.8
V
—
—
—
—
—
V
Min
3
3
Min
40
—
—
—
—
40
—
MIN
MIN
Preliminary
(2)
PIC24F16KA102 FAMILY
Typ
Typ
—
—
—
—
—
—
—
—
—
Typ
10M
10
—
—
—
(1)
—
—
—
2
4
7
(1)
(1)
Max
0.4
0.4
0.4
0.4
—
—
—
—
—
Max
3.6
—
—
—
—
Max
3.6
—
—
—
—
—
-40°C ≤ T
-40°C ≤ T
-40°C ≤ T
Units
—
V
V
V
V
V
V
V
V
Units
E/W
Year
mA
ms
Units
V
Year
E/W
E/W
mA
ms
V
I
I
I
I
I
I
I
I
A
A
A
OL
OL
OL
OL
OH
OH
OH
OH
≤ +85°C for Industrial
≤ +85°C for Industrial
≤ +85°C for Industrial
V
Provided no other specifications are
violated
= 4.0 mA, V
= 3.5 mA, V
= 8.0 mA, V
= 4.5 mA, V
MIN
V
Provided no other specifications are
violated
= -3.0 mA, V
= -1.0 mA, V
= -2.5 mA, V
= -1.0 mA, V
MIN
= Minimum operating voltage
= Minimum operating voltage
Conditions
Conditions
DD
DD
DD
DD
Conditions
DD
DD
DD
DD
—
= 3.6V
= 2.0V
= 3.6V
= 1.8V
= 3.6V
= 2.0V
= 3.6V
= 2.0V
DS39927B-page 221