PIC24HJ64GP510A-E/PF Microchip Technology, PIC24HJ64GP510A-E/PF Datasheet - Page 45

16 Bit MCU 40MIPS 64KB FLASH 100 TQFP 14x14x1mm TRAY

PIC24HJ64GP510A-E/PF

Manufacturer Part Number
PIC24HJ64GP510A-E/PF
Description
16 Bit MCU 40MIPS 64KB FLASH 100 TQFP 14x14x1mm TRAY
Manufacturer
Microchip Technology
Series
PIC® 24Hr

Specifications of PIC24HJ64GP510A-E/PF

Core Processor
PIC
Core Size
16-Bit
Speed
40 MIPs
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
85
Program Memory Size
64KB (22K x 24)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 32x10b/12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC24HJ64GP510A-E/PF
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
PIC24HJ64GP510A-E/PF
Manufacturer:
Microchip Technology
Quantity:
10 000
5.8
Reading from code memory is performed by executing
a series of TBLRD instructions and clocking out the data
using the REGOUT command.
Table 5-8
reading code memory. In Step 1, the Reset vector is
exited. In Step 2, the 24-bit starting source address for
reading is loaded into the TBLPAG register and W6
register. The upper byte of the starting source address
is stored in TBLPAG and the lower 16 bits of the source
address are stored in W6.
TABLE 5-8:
© 2010 Microchip Technology Inc.
Step 1: Exit the Reset vector.
Step 2: Initialize TBLPAG and the read pointer (W6) for TBLRD instruction.
Step 3: Initialize the write pointer (W7) and store the next four locations of code memory to W0:W5.
Command
(Binary)
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
Reading Code Memory
shows the ICSP programming details for
SERIAL INSTRUCTION EXECUTION FOR READING CODE MEMORY
040200
040200
000000
200xx0
880190
2xxxx6
EB0380
000000
BA1B96
000000
000000
BADBB6
000000
000000
BADBD6
000000
000000
BA1BB6
000000
000000
BA1B96
000000
000000
BADBB6
000000
000000
BADBD6
000000
000000
BA0BB6
000000
000000
(Hex)
Data
GOTO
GOTO
NOP
MOV
MOV
MOV
CLR
NOP
TBLRDL
NOP
NOP
TBLRDH.B
NOP
NOP
TBLRDH.B
NOP
NOP
TBLRDL
NOP
NOP
TBLRDL
NOP
NOP
TBLRDH.B
NOP
NOP
TBLRDH.B
NOP
NOP
TBLRDL
NOP
NOP
0x200
#<SourceAddress23:16>, W0
W0, TBLPAG
#<SourceAddress15:0>, W6
0x200
W7
[W6], [W7++]
[W6++], [W7++]
[++W6], [W7++]
[W6++], [W7++]
[W6], [W7++]
[W6++], [W7++]
[++W6], [W7++]
[W6++], [W7]
To minimize the reading time, the packed instruction
word format that was utilized for writing is also used for
reading (see
W7, is initialized. In Step 4, two instruction words are
read from code memory and clocked out of the device,
through the VISI register, using the REGOUT command.
Step 4 is repeated until the desired amount of code
memory is read.
Description
Figure
5-7). In Step 3, the write pointer,
DS70152H-page 45

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