SEMIX202GB12E4S SEMIKRON, SEMIX202GB12E4S Datasheet
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Manufacturer Part Number
SEMIX202GB12E4S
Specifications of SEMIX202GB12E4S
Family/system
SEMiX
Voltage (v)
1200
Current (a)
200
Chip-type
IGBT 4 (Trench)
Available stocks
Part Number:
SEMIX202GB12E4S
SEMiX202GB12E4s
Trench IGBT Modules
SEMiX202GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• Dynamic values apply to the
© by SEMIKRON
SEMiX
coefficient
max.
T
following combination of resistors:
R
R
R
R
j
CE(sat)
Gon,main
Goff,main
G,X
E,X
=150°C
= 0,5
= 2,2
with positive temperature
= 1,0
= 1,0
®
2s
GB
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
d(on)
r
d(off)
f
CE
CES
GES
j
j
stg
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 1 – 17.01.2012
T
T
V
V
V
T
t
T
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 25 °C
= 175 °C
= 175 °C
= 200 A
= 25 °C
= 200 A
=V
= 1200 V
= 25 V
= 800 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
on
off
= 3xI
= 3xI
≤ 1200 V
= 2.4
= 2.4
= 3600 A/µs
= 2100 A/µs
CE
= 80 °C
, I
Fnom
Cnom
C
= 7.6 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
4000
1130
typ.
12.3
0.81
0.69
3.75
27.9
314
242
200
600
229
172
200
600
990
600
253
533
113
1.8
2.2
0.8
0.7
5.0
7.5
5.8
0.1
10
55
22
max.
2.05
0.14
2.4
0.9
0.8
5.8
8.0
6.5
0.3
Unit
Unit
K/W
m
m
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
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SEMIX202GB12E4S Summary of contents
... SEMiX202GB12E4s SEMiX ® 2s Trench IGBT Modules SEMiX202GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...
... SEMiX202GB12E4s SEMiX ® 2s Trench IGBT Modules SEMiX202GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...
... SEMiX202GB12E4s Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 17.01.2012 = ...
... SEMiX202GB12E4s Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 17.01.2012 G CC'+EE' ...
... SEMiX202GB12E4s SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...
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