SSM2212RZ-RL Analog Devices Inc, SSM2212RZ-RL Datasheet

SSM2212RZ-RL

Manufacturer Part Number

SSM2212RZ-RL

Description

Low Noise,Matched Dual NPN Transistor

Manufacturer

Analog Devices Inc

Datasheet

1.SSM2212.pdf (12 pages)

Specifications of SSM2212RZ-RL

Transistor Type

2 NPN (Dual)

Current - Collector (ic) (max)

20mA

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

200mV @ 100µA, 1mA

Current - Collector Cutoff (max)

500pA

Frequency - Transition

200MHz

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Dc Current Gain (hfe) (min) @ Ic, Vce

Power - Max

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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FEATURES

Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz

Excellent current gain match: 0.5%

Low offset voltage (V

Outstanding offset voltage drift: 0.03 μV/°C

High gain bandwidth product: 200 MHz

GENERAL DESCRIPTION

The SSM2212 is a dual, NPN-matched transistor pair that is

specifically designed to meet the requirements of ultralow noise

audio systems.

With its extremely low input base spreading resistance (rbb' is

typically 28 Ω) and high current gain (h

at I

noise ratios. The high current gain results in superior

performance compared to systems incorporating commercially

available monolithic amplifiers.

Excellent matching of the current gain (Δh

low V

symmetrically balanced designs, which reduce high-order

amplifier harmonic distortion.

Rev.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

= 1 mA), the SSM2212 can achieve outstanding signal-to-

of less than 10 μV typical make the SSM2212 ideal for

): 200 μV maximum

typically exceeds 600

) to about 0.5% and

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

Stability of the matching parameters is guaranteed by protection

diodes across the base-emitter junction. These diodes prevent

degradation of beta and matching characteristics due to reverse

biasing of the base-emitter junction.

The SSM2212 is also an ideal choice for accurate and reliable

current biasing and mirroring circuits. Furthermore, because a

current mirror’s accuracy degrades exponentially with mismatches

of V

does not need offset trimming in most circuit applications.

The SSM2212 performance and characteristics are guaranteed

over the extended temperature range of −40°C to +85°C.

between transistor pairs, the low V

NIC = NO INTERNAL CONNECTION

PIN CONFIGURATION

NIC

Audio, Dual-Matched

Figure 1. 8-Lead SOIC_N

2010

SSM2212

NPN Transistor

NIC

SSM2212

of the SSM2212

www.analog.com

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