K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 11

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

5.0 DDR2 SDRAM Addressing
K4T1G084QE
K4T1G164QE
1Gb Addressing
* Reference information: The following tables are address mapping information for other densities.
256Mb
512Mb
2Gb
4Gb
K4T1G044QE
Column Address
Column Address
Column Address
Column Address
Column Address
Auto precharge
Auto precharge
Auto precharge
Auto precharge
Auto precharge
Configuration
Configuration
Configuration
Configuration
Configuration
Bank Address
Bank Address
Bank Address
Bank Address
Bank Address
Row Address
Row Address
Row Address
Row Address
Row Address
# of Bank
# of Bank
# of Bank
# of Bank
# of Bank
A0 ~ A9,A11
A0 ~ A9,A11
A0 ~ A9,A11
A0 ~ A9,A11
A0 - A9,A11
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
256Mb x4
512Mb x4
128Mb x4
A0 ~ A13
A0 ~ A14
A0 ~ A12
A0 ~ A13
64Mb x4
BA0,BA1
BA0,BA1
A0 - A15
1 Gb x4
A10/AP
A10/AP
A10/AP
A10/AP
A10/AP
8
8
4
8
4
11 of 45
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
256Mb x 8
512Mb x 8
128Mb x 8
A0 ~ A14
A0 ~ A13
32Mb x 8
A0 ~ A12
64Mb x 8
BA0,BA1
BA0,BA1
A0 ~ A13
A0 - A15
A0 ~ A9
A0 ~ A9
A0 ~ A9
A0 ~ A9
A10/AP
A10/AP
A10/AP
A10/AP
A10/AP
A0 - A9
8
8
8
4
4
Rev. 1.1 December 2008
DDR2 SDRAM
128Mb x16
256Mb x16
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
64Mb x16
16Mb x16
32Mb x16
A0 ~ A12
A0 ~ A13
BA0,BA1
A0 ~ A12
BA0,BA1
A0 ~ A12
A0 - A14
A0 ~ A9
A0 ~ A8
A0 ~ A9
A0 ~ A9
A10/AP
A10/AP
A10/AP
A0 - A9
A10/AP
A10/AP
8
8
8
4
4