K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 12

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4T1G084QE
K4T1G164QE
K4T1G044QE
6.0 Absolute Maximum DC Ratings
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
3. V
4. Voltage on any input or I/O may not exceed voltage on V
7.0 AC & DC Operating Conditions
7.1 Recommended DC Operating Conditions (SSTL - 1.8)
Note : There is no specific device V
1. The value of V
2. Peak to peak AC noise on V
3. V
4. AC parameters are measured with V
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
standard.
than 500mV, V
x V
V
DD
TT
Symbol
Symbol
IN,
V
DDQ
V
T
V
V
V
to V
V
V
V
of transmitting device must track V
and V
DDQ
STG
DDL
DDQ
DDL
REF
V
DD
DD
TT
OUT
of the transmitting device and V
DD
DDQ
.
REF
REF
Voltage on V
Voltage on V
Voltage on V
Voltage on any pin relative to V
Storage Temperature
must be within 300mV of each other at all times; and V
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
may be selected by the user to provide optimum noise margin in the system. Typically the value of V
may be equal to or less than 300mV.
DD
DDQ
DDL
REF
pin relative to V
pin relative to V
DD
pin relative to V
may not exceed +/-2% V
Parameter
supply voltage requirement for SSTL-1.8 compliance. However under all conditions V
DD
Parameter
REF
, V
REF
DDQ
of receiving device.
is expected to track variations in V
SS
SS
and V
SS
SS
DDL
DDQ
tied together.
REF
.
(DC).
12 of 45
0.49*V
V
REF
REF
Min.
1.7
1.7
1.7
-0.04
must be not greater than 0.6 x V
DDQ
DDQ
.
0.50*V
Rating
V
Typ.
1.8
1.8
1.8
REF
DDQ
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
Rating
0.51*V
V
REF
Max.
DDQ
1.9
1.9
1.9
+0.04
DDQ
. When V
Rev. 1.1 December 2008
DD
REF
DDQ
DDR2 SDRAM
Units
and V
mV
is expected to be about 0.5
V
V
V
V
must be less than or equal
DDQ
Units
°C
V
V
V
V
and V
DDL
Notes
1,2
Notes
4
4
3
are less
1, 2
1
1
1
1