K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 13

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K4T1G164QE-HCE6000

Manufacturer Part Number
K4T1G164QE-HCE6000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet

Specifications of K4T1G164QE-HCE6000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
K4T1G084QE
K4T1G164QE
7.2 Operating Temperature Condition
7.3 Input DC Logic Level
7.4 Input AC Logic Level
Note :
1. For information related to V
7.5 AC Input Test Conditions
Note :
1. Input waveform timing is referenced to the input signal crossing through the V
2. The input signal minimum slew rate is to be maintained over the range from V
3. AC timings are referenced with input waveforms switching from V
K4T1G044QE
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to
tude allowed for overshoot and undershoot.
max for falling edges as shown in the below figure.
transitions.
V
JESD51.2 standard.
self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
SWING(MAX)
Symbol
SLEW
Symbol
V
Symbol
V
V
T
REF
IH
IL
OPER
Symbol
V
V
(DC)
(DC)
IH
IL
(AC)
(AC)
DC input logic high
DC input logic low
PEAK
Parameter
Input signal maximum peak to peak swing
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
AC input logic high
AC input logic low
V
Input signal minimum slew rate
Falling Slew =
SWING(MAX)
Operating Temperature
Parameter
Input reference voltage
Parameter
delta TF
Condition
V
REF
V
< AC Input Test Signal Waveform >
REF
- V
delta TF
Min.
- 0.3
IL
+ 0.125
(AC)max
IL
13 of 45
V
V
(AC) to V
SSQ
REF
Min.
+ 0.200
- V
PEAK
IH
delta TR
IH/IL
DDR2-667, DDR2-800
REF
(AC) on the positive transitions and V
V
V
Rising Slew =
(AC) level applied to the device under test.
REF
DDQ
to V
Max.
Rating
0 to 95
- 0.125
IH
+ 0.3
(AC) min for rising edges and the range from V
0.5 * V
Value
1.0
1.0
V
DDQ
V
V
IH
DDQ
REF
(AC)min - V
V
V
V
V
V
V
V
delta TR
Max.
DDQ
IH
IH
REF
IL
IL
SS
+ V
- 0.200
(DC)max
(AC)max
(AC)min
(DC)min
PEAK
Units
REF
Units
V
V
Rev. 1.1 December 2008
°C
Units
V/ns
IH
V
V
(AC) to V
DDR2 SDRAM
IL
(AC) on the negative
Units
Notes
V
V
Notes
1, 2
REF
Notes
2, 3
1
1
to V
IL
(AC)

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