K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 18

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4T1G084QE
K4T1G164QE
K4T1G044QE
11.0 DDR2 SDRAM IDD Spec Table
Symbol
IDD3P-S
Symbol
Symbol
IDD3P-F
IDD3P-F
IDD3P-S
IDD3P-F
IDD3P-S
IDD4W
IDD4W
IDD4W
IDD2Q
IDD2Q
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD2P
IDD2N
IDD3N
IDD4R
IDD2P
IDD2N
IDD3N
IDD4R
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
CE7
CE7
CE7
10
10
10
10
10
10
800@CL=5
800@CL=5
800@CL=5
120
165
120
170
125
115
200
52
58
23
28
26
15
37
72
90
65
75
25
32
28
15
40
95
52
58
23
28
26
15
37
67
85
LE7
LE7
LE7
5
5
5
5
5
5
128Mx8 (K4T1G084QE)
64Mx16 (K4T1G164QE)
128Mx4 (K4T1G044QE)
CF7
CF7
CF7
10
10
10
10
10
10
800@CL=6
800@CL=6
800@CL=6
120
170
125
115
200
120
165
52
58
23
28
26
15
37
72
90
65
75
25
32
28
15
40
95
52
58
23
28
26
15
37
67
85
18 of 45
LF7
LF7
LF7
5
5
5
5
5
5
CE6
CE6
CE6
10
10
10
10
10
10
667@CL=5
667@CL=5
667@CL=5
155
185
115
115
110
115
150
50
55
23
27
25
15
35
65
80
60
70
25
30
27
15
37
90
50
55
23
27
25
15
35
60
75
LE6
LE6
LE6
5
5
5
5
5
5
Rev. 1.1 December 2008
Unit
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DDR2 SDRAM
Notes
Notes
Notes