K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 27

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
Note : DQS signal must be monotonic between V
V
V
V
V
Setup Slew Rate
V
V
IL
IL
Falling Signal
REF
DDQ
IH
IH
(DC)max
Figure 6 - IIIustration of nominal slew rate for tDS (single-ended DQS)
(AC)max
(DC)min
(AC)min
V
V
V
V
V
V
V
(DC)
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
V
region
REF
=
to ac
V
∆TF
REF
(DC) - V
∆TF
nominal slew
tDS
IL
rate
(AC)max
27 of 45
tDH
IL
Setup Slew Rate
(AC)max and V
Rising Signal
∆TR
tDS
nominal
slew rate
IH
=
(AC)min.
V
IH
(AC)min - V
tDH
V
∆TR
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)
DDR2 SDRAM