K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 28

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4T1G084QE
K4T1G164QE
K4T1G044QE
V
V
V
V
V
V
Setup Slew Rate
IL
IL
DDQ
REF
IH
IH
Falling Signal
(DC)max
(AC)max
Figure 7 - IIIustration of tangent line for tDS (differential DQS, DQS)
(AC)min
(DC)min
(DC)
DQS
DQS
V
nominal
SS
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tDS
tangent
REF
line
(DC) - V
28 of 45
Setup Slew Rate
tDH
Rising Signal
IL
(AC)max]
nominal
line
=
tangent line[V
∆TR
tDS
tangent
line
∆TR
IH
tDH
(AC)min - V
V
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)]
DDR2 SDRAM