K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 29

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
Note : DQS signal must be monotonic between V
V
V
V
V
V
V
Setup Slew Rate
IL
IL
DDQ
REF
IH
IH
Falling Signal
(DC)max
(AC)max
Figure 8 - IIIustration of tangent line for tDS (single-ended DQS)
(AC)min
(DC)min
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
V
(AC)min
(DC)min
nominal
SS
(DC)
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tDS
tangent
REF
line
(DC) - V
29 of 45
Setup Slew Rate
Rising Signal
tDH
IL
(AC)max]
IL
nominal
(DC)max and V
line
=
∆TR
tangent line[V
tDS
IH
tangent
(DC)min.
line
∆TR
IH
(AC)min - V
tDH
V
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)]
DDR2 SDRAM