K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 31

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K4T1G164QE-HCE6000

Manufacturer Part Number
K4T1G164QE-HCE6000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet

Specifications of K4T1G164QE-HCE6000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
V
V
V
V
Note : DQS signal must be monotonic between V
V
V
IL
IL
REF
DDQ
IH
IH
(DC)max
(AC)max
Hold Slew Rate
(AC)min
(DC)min
Rising Signal
Figure 10 - IIIustration of nominal slew rate for tDH (single-ended DQS)
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
IL
IL
SS
REF
V
(DC)max
(AC)max
(AC)min
(DC)min
SS
(DC)
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
∆TR
slew rate
nominal
tDS
IL
(DC)max
31 of 45
tDH
IL
∆TR
(DC)max and V
Hold Slew Rate
Falling Signal
tDS
nominal
slew rate
IH
=
(DC)min.
V
IH
(DC)min - V
tDH
∆TF
∆TF
Rev. 1.1 December 2008
REF
(DC)
DDR2 SDRAM

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