K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 32

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4T1G084QE
K4T1G164QE
K4T1G044QE
V
V
V
V
V
V
IL
IL
REF
DDQ
IH
IH
Hold Slew Rate tangent line [ V
Rising Signal
(DC)max
(AC)max
(AC)min
(DC)min
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
(DC)
DQS
DQS
V
SS
=
dc to V
dc to V
region
region
REF
REF
∆TR
tDS
tangent
REF
line
(DC) - V
32 of 45
Hold Slew Rate
Falling Signal
tDH
IL
(DC)max ]
∆TR
=
nominal
tangent line [ V
line
tDS
tangent
∆TF
line
IH
tDH
(DC)min - V
∆TF
nominal
line
Rev. 1.1 December 2008
REF
(DC) ]
DDR2 SDRAM