K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 34

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

9. tIS and tIH (input setup and hold) derating
Table 4 - Derating values for DDR2-400, DDR2-533
K4T1G084QE
K4T1G164QE
K4T1G044QE
Address Slew
Command/
rate(V/ns)
0.25
0.15
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-1450
+187
+179
+167
+150
+125
-110
-175
-285
-350
-525
-800
∆tIS
+83
-11
-25
-43
-67
0
2.0 V/ns
∆tIS, ∆tIH Derating Values for DDR2-400, DDR2-533
-1125
∆tIH
-125
-188
-292
-375
-500
-708
+94
+89
+83
+75
+45
+21
-14
-31
-54
-83
0
-1420
+217
+209
+197
+180
+155
+113
∆tIS
-145
-255
-320
-495
-770
+30
+19
-13
-37
-80
+5
34 of 45
1.5 V/ns
CK, CK Differential Slew Rate
-1095
+124
+119
+113
+105
-158
-262
-345
-470
-678
∆tIH
+75
+51
+30
+16
-24
-53
-95
-1
-1390
+247
+239
+227
+210
+185
+143
-115
-225
-290
-465
-740
∆tIS
+60
+49
+35
+17
-50
-7
1.0 V/ns
-1065
+154
+149
+143
+135
+105
∆tIH
-128
-232
-315
-440
-648
+81
+60
+46
+29
-23
-65
+6
Rev. 1.1 December 2008
DDR2 SDRAM
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Notes
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1