K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 39

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K4T1G164QE-HCE6000

Manufacturer Part Number
K4T1G164QE-HCE6000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet

Specifications of K4T1G164QE-HCE6000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
Hold Slew Rate
V
V
V
V
V
V
Rising Signal
DDQ
IH
IH
REF
IL
IL
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
CK
CK
V
SS
=
dc to V
dc to V
region
region
tangent line [ V
Figure 16 - IIIustration of tangent line for tIH
REF
REF
∆TR
tIS
tangent
REF
line
(DC) - V
39 of 45
Hold Slew Rate
Falling Signal
tIH
IL
(DC)max ]
∆TR
=
nominal
tangent line [ V
line
tIS
tangent
∆TF
line
IH
tIH
(DC)min - V
∆TF
nominal
line
Rev. 1.1 December 2008
REF
(DC)]
DDR2 SDRAM

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