K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 4

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

1.0 Ordering Information
Note :
1. Speed bin is in order of CL-tRCD-tRP.
2. RoHS Compliant.
3. “H” of Part number(12th digit) stands for Lead-Free, Halogen-Free, and RoHS compliant products.
4. “C” of Part number(13th digit) stands normal, and “L” stands for Low power products.
2.0 Key Features
Note : This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device
K4T1G084QE
K4T1G164QE
K4T1G044QE
• JEDEC standard V
• V
• 333MHz f
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
• Average Refresh Period 7.8us at lower than T
• All of products are Lead-Free, Halogen-Free, and RoHS com-
256Mx4
128Mx8
64Mx16
pin
strobe is an optional feature)
3.9us at 85°C < T
pliant
Org.
Operation & Timing Diagram”.
DDQ
CAS Latency
tRCD(min)
- 50ohm ODT
- High Temperature Self-Refresh rate enable
tRP(min)
tRC(min)
Speed
= 1.8V ± 0.1V
CK
for 667Mb/sec/pin, 400MHz f
K4T1G044QE-HC(L)E7
K4T1G084QE-HC(L)E7
K4T1G164QE-HC(L)E7
CASE
DD
DDR2-800 5-5-5
= 1.8V ± 0.1V Power Supply
< 95 °C
DDR2-800 5-5-5
12.5
12.5
57.5
5
CK
for 800Mb/sec/
CASE
K4T1G044QE-HC(L)F7
K4T1G084QE-HC(L)F7
K4T1G164QE-HC(L)F7
85°C,
DDR2-800 6-6-6
4 of 45
DDR2-800 6-6-6
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x
8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks
device. This synchronous device achieves high speed double-
data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for
general applications.
The chip is designed to comply with the following key DDR2
SDRAM features such as posted CAS with additive latency, write
latency = read latency - 1, Off-Chip Driver(OCD) impedance
adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair
of externally supplied differential clocks. Inputs are latched at the
crosspoint of differential clocks (CK rising and CK falling). All I/Os
are synchronized with a pair of bidirectional strobes (DQS and
DQS) in a source synchronous fashion. The address bus is used
to convey row, column, and bank address information in a RAS/
CAS multiplexing style. For example, 1Gb(x8) device receive 14/
10/3 addressing.
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power
supply and 1.8V ± 0.1V V
The 1Gb DDR2 device is available in 60ball FBGA(x4/x8) and in
84ball FBGA(x16).
Note : The functionality described and the timing specifications included in
15
15
60
6
this data sheet are for the DLL Enabled mode of operation.
K4T1G044QE-HC(L)E6
K4T1G084QE-HC(L)E6
K4T1G164QE-HC(L)E6
DDR2-667 5-5-5
DDR2-667 5-5-5
DDQ
.
15
15
60
Rev. 1.1 December 2008
5
DDR2 SDRAM
Package
60 FBGA
60 FBGA
84 FBGA
Units
tCK
ns
ns
ns