MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 101

no-image

MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
SAMSUNG
Quantity:
1 001
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON21
Quantity:
1 684
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT41J256M8HX-15E:D
Quantity:
5 845
Part Number:
MT41J256M8HX-15E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 43: DLL Disable
Table 69:
Input Clock Frequency Change
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D4.fm - Rev G 2/09 EN
DQ BL8 DLL disable
DQ BL8 DLL disable
DQS, DQS# DLL off
DQS, DQS# DLL off
DQS, DQS# DLL on
DQ BL8 DLL on
Command
Address
CK#
CK
READ Electrical Characteristics, DLL Disable Mode
READ
Valid
T0
NOP
T1
When the DDR3 SDRAM is initialized, it requires the clock to be stable during most
normal states of operation. This means that after the clock frequency has been set to the
stable state, the clock period is not allowed to deviate except what is allowed for by the
clock jitter and spread spectrum clocking (SSC) specifications.
The input clock frequency can be changed from one stable clock rate to another under
two conditions: self refresh mode and precharge power-down mode. Outside of these
two modes, it is illegal to change the clock frequency. For the self refresh mode condi-
tion, when the DDR3 SDRAM has been successfully placed into self refresh mode and
t
becomes a “Don’t Care,” changing the clock frequency is permissible, provided the new
clock frequency is stable prior to
for the sole purpose of changing the clock frequency, the self refresh entry and exit spec-
ifications must still be met.
The precharge power-down mode condition is when the DDR3 SDRAM is in precharge
power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a
logic LOW or R
R
and CKE must be at a logic LOW. A minimum of
before the clock frequency can change. The DDR3 SDRAM input clock frequency is
allowed to change only within the minimum and maximum operating frequency
specified for the particular speed grade (
input clock frequency change, CKE must be held at a stable LOW level. When the input
clock frequency is changed, a stable clock must be provided to the DRAM
precharge power-down may be exited. After precharge power-down is exited and
Parameter
CKSRE has been satisfied, the state of the clock becomes a “Don’t Care.” When the clock
t
Access window of DQS from CK, CK#
TT
DQSCK Timing
_
RL (DLL disable) = AL + (CL - 1) = 5
NOM
NOP
T2
RL = AL + CL = 6 (CL = 6, AL = 0)
and R
TT
CL = 6
TT
NOP
T3
_
_
NOM
WR
are in an off state prior to entering precharge power-down mode,
and R
NOP
T4
TT
101
_
WR
t
CKSRX. When entering and exiting self refresh mode
NOP
T5
must be disabled via MR1 and MR2. This ensures
t DQSCK (
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DI
b
t
t
DQSCK (
CK [AVG] MIN to
t DQSCK (
DLL
Symbol
b + 1
NOP
_
DI
T6
DI
b
DIS
) MIN
DI
b
DLL
t
CKSRE must occur after CKE goes LOW
b + 2
_
b + 1
DLL
2Gb: x4, x8, x16 DDR3 SDRAM
DI
DIS
DI
) MAX
b + 1
_
DI
DIS
NOP
b + 3
b + 2
T7
DI
DI
)
b + 2
DI
b + 4
b + 3
DI
DI
t
CK [AVG] MAX). During the
b + 3
DI
©2006 Micron Technology, Inc. All rights reserved.
b + 4
NOP
b + 5
Min
DI
T8
DI
1
b + 4
DI
b + 6
b + 5
DI
DI
Transitioning Data
b + 5
DI
Max
NOP
b + 7
b + 6
T9
DI
DI
10
t
Commands
CKSRX before
b + 6
DI
b + 7
DI
b + 7
DI
t
Units
Don’t Care
XP has
T10
NOP
ns

Related parts for MT41J256M8HX-15E:D