MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 29

• Manufacturer Part Number: MT41J256M8HX-15E:D
• Description: MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-15E:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Compliant

Electrical Specifications – I
Table 9:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D2.fm - Rev G 2/09 EN
I
t
CL I
t
t
t
t
t
t
t
DD
CK (MIN) I
RCD (MIN) I
RC (MIN) I
RAS (MIN) I
RP (MIN)
FAW
RRD I
RFC
DD
Parameter
DD
DD
DD
DD
DD
x4, x8
x16
x4, x8
x16
2Gb
Timing Parameters used for I
5-5-5
-25E
20
15
16
20
64
5
5
5
4
4
DDR3-800
Within the following Idd measurement tables (Table 9 through Table 19), the following
definitions and conditions are used, unless stated otherwise:
• LOW: V
• Mid-level: Inputs are V
• R
• R
• R
• Q
• ODT is enabled in MR1 (R
• TDQS is disabled in MR1
• External DQ/DQS/DM load resister is 25Ω to V
• Burst lengths are BL8 fixed
• AL equals 0 (except in I
• I
• Input slew rate is specified by AC parametric test conditions
• Optional ASR is disabled
• READ burst type uses nibble sequential (MR0 [3] 0)
• Loop patterns must be executed at least once prior to current measurements begin
2.5
DD
ON
TT
TT
OFF
6-6-6
_
_
specifications are tested after the device is properly initialized
-25
set to RZQ/7, that is, 34Ω
21
15
16
20
64
NOM
WR
6
6
6
4
4
is enabled in MR1
IN
Electrical Specifications – I
set to RZQ/2, that is, 120Ω.
set to RZQ/6, that is, 40Ω.
≤ V
-187E
IL
7-7-7
DD
27
20
20
27
86
(
DDR3-1066
7
7
7
4
6
AC
DD
) MAX; HIGH: V
1.875
Specifications and Conditions
Measurements – Clock Units
REF
8-8-8
DD
-187
28
20
20
27
86
8
8
8
4
6
7)
TT
= V
29
_
NOM
DD
/2
9-9-9
-15E
107
IN
) and MR2 (R
33
24
20
30
9
9
9
4
5
DDR3-1333
≥ V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IH
1.5
(
10-10-10
AC
DD
107
) MIN
-15
10
10
34
24
10
20
30
4
5
2Gb: x4, x8, x16 DDR3 SDRAM
Specifications and Conditions
DD
TT
_
Q/2
WR
)
10-10-10
-125E
128
10
10
38
28
10
24
32
5
6
DDR3-1600
©2006 Micron Technology, Inc. All rights reserved.
1.25
11-11-11
-125
128
11
11
39
28
11
24
32
5
6
Units
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
ns