MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 54

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MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

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Table 34:
Table 35:
ODT Timing Definitions
Figure 22:
Table 36:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D3.fm - Rev G 2/09 EN
Symbol
Symbol
t
t
AONPD
AOFPD
t
t
t
AON
ADC
AOF
R
TT
ODT Sensitivity Definition
ODT Temperature and Voltage Sensitivity
ODT Timing Definitions
ODT Timing Reference Load
Rising edge of CK - CK# defined by the
Rising edge of CK - CK# defined by the
Rising edge of CK - CK# defined by the
Rising edge of CK - CK# with ODT first
Rising edge of CK - CK# with ODT first
end point of ODTL
0.9 - dR
Notes:
Notes:
Begin Point Definition
being registered HIGH
end point of ODTL off
being registered LOW
end point of ODTL on
TT
dT × |DT| - dR
1. ΔT = T - T(@ calibration), ΔV = V
1. ΔT = T - T(@ calibration), ΔV = V
ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 22. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another
defines when ODT turns on or off dynamically. Table 36 outlines and provides definition
and measurement reference settings for each parameter (see Figure 37 on page 55).
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
ODTL
CK, CK#
Min
CNW
CWN
Change
dR
dR
, ODTL
8
TT
TT
TT
dV
dT
dV × |DV|
DUT
TDQS, TDQS#
DQS, DQS#
CWN
ZQ
DQ, DM
4, or
V
REF
V
DD
RZQ = 240Ω
Q/2
R
Timing reference point
Extrapolated points at V
TT
54
1.6 + dR
Extrapolated point at V
Extrapolated point at V
Min
= 25Ω
DD
DD
0
0
Extrapolated point at V
Extrapolated point at V
Q - V
Q - V
End Point Definition
TT
dT × |DT| + dR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
V
V
V
Q(@ calibration) and V
Q(@ calibration) and V
TT
SS
RTT
Q
= V
Max
_
NOM
SS
Q
2Gb: x4, x8, x16 DDR3 SDRAM
RTT
TT
RTT
RTT
Max
0.15
dV × |DV|
1.5
_
SS
SS
_
_
WR
NOM
NOM
Q
Q
and
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
DD
DD
= V
= V
Figure 23 on page 55
Figure 23 on page 55
Figure 24 on page 56
Figure 24 on page 56
Figure 25 on page 56
RZQ/(2, 4, 6, 8, 12)
DD
DD
Q.
Q.
Figure
%/mV
Units
Units
%/°C

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