MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 72

• Manufacturer Part Number: MT41J256M8HX-15E:D
• Description: MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-15E:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Compliant

Table 56:
Parameter
DLL locking time
CTRL, CMD, ADDR
setup to CK,CK#
CTRL, CMD, ADDR
setup to CK,CK#
CTRL, CMD, ADDR
hold from CK,CK#
Minimum CTRL, CMD, ADDR pulse width
ACTIVATE to internal READ or WRITE delay
PRECHARGE command period
ACTIVATE-to-PRECHARGE command period
ACTIVATE-to-ACTIVATE command period
ACTIVATE-to-
ACTIVATE minimum
command period
Four ACTIVATE windows for 1KB page size
Four ACTIVATE windows for 2KB page size
Write recovery time
Delay from start of internal WRITE transaction
to internal READ command
READ-to-PRECHARGE time
CAS#-to-CAS# command delay
Auto precharge write recovery + precharge
time
MODE REGISTER SET command cycle time
MODE REGISTER SET command update delay
MULTIPURPOSE REGISTER READ burst end to
mode register set for multipurpose register
exit
Electrical Characteristics and AC Operating Conditions (Sheet 3 of 6)
Notes: 1–8 apply to the entire table; notes appear on page 76
Base (specification)
V
Base (specification)
V
Base (specification)
V
1KB page size
2KB page size
REF
REF
REF
@ 1 V/ns
@ 1 V/ns
@ 1 V/ns
Symbol
AC175
AC150
DC100
t
t
t
t
t
t
MPRR
t
t
t
t
DLLK
t
t
t
MOD
FAW
t
WTR
MRD
RCD
RRD
CCD
DAL
IPW
t
RAS
t
t
WR
RTP
t
t
RP
RC
IH
IS
IS
Command and Address Timing
MIN = greater of
Min
512
200
375
350
500
275
375
900
4CK or 10ns
40
50
DDR3-800
MIN = greater of 4CK or 10ns
Max
–
–
–
–
–
–
–
–
–
–
See “Speed Bin Tables” on page 66 for
See “Speed Bin Tables” on page 66 for
See “Speed Bin Tables” on page 66 for
See “Speed Bin Tables” on page 66 for
MIN = greater of 12CK or 15ns; MAX = n/a
MIN = greater of 4CK or 7.5ns; MAX = n/a
MIN = greater of 4CK or 7.5ns; MAX = n/a
MIN = WR +
MIN = greater of
Min
37.5
512
125
300
275
425
200
300
780
4CK or 7.5ns
DDR3-1066
50
MIN = 15ns; MAX = n/a
MIN = 4CK; MAX = n/a
MIN = 4CK; MAX = n/a
MIN = 1CK; MAX = n/a
Max
t
RP
–
–
–
–
–
–
–
–
–
–
/
t
CK (AVG); MAX = n/a
MIN = greater of
Min
512
240
190
340
140
240
620
DDR3-1333
65
30
45
MIN = greater of 4CK or 7.5ns
4CK or 6ns
Max
–
–
–
–
–
–
–
–
–
–
t
t
RCD
RAS
t
t
RP
RC
MIN = greater of
Min
512
220
170
320
220
560
120
DDR3-1600
45
30
40
4CK or 6ns
Max
–
–
–
–
–
–
–
–
–
–
Units Notes
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
ps
ps
ps
ps
ps
ps
ps
ns
ns
ns
ns
ns
ns
ns
31, 34
29, 30
20, 30
20, 30
29, 30
20, 30
31, 32
32, 33
31, 32
29, 30
31,
28
41
31
31
31
31
31
31
31